The hydrogen plasma doping of nanocrystalline ZnO thin flms

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00483629" target="_blank" >RIV/68378271:_____/17:00483629 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The hydrogen plasma doping of nanocrystalline ZnO thin flms

Original language description

We study the effect on the optical and electrical properties of hydrogen plasma treatment of the nominally undoped, nanocrystalline ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. After hydrogen plasma treatment, the increase of the electrical conductivity and the increase of the infrared optical absorption was detected and related to the increase of the free carrier concentration. To confirm this relation, the mobility and carrier concentration were measured by temperature dependent electrical resistivity and Hall effect using the van der Pauw method. We also investigated the localized defect states below the optical absorption edge using optical absorption spectroscopy and photoluminescence in a broad spectral range from near UV to near IR. We conclude that the increase of the electrical conductivity is indeed confirmed to be related to the increase of the free carrier concentration.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů