Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00487173" target="_blank" >RIV/68378271:_____/17:00487173 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/17:00310445
Result on the web
<a href="http://dx.doi.org/10.1515/jee-2017-0010" target="_blank" >http://dx.doi.org/10.1515/jee-2017-0010</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1515/jee-2017-0010" target="_blank" >10.1515/jee-2017-0010</a>
Alternative languages
Result language
angličtina
Original language name
Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films
Original language description
In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA14-04790S" target="_blank" >GA14-04790S: Engineering Bulk and Surface of Diamond Nano-Objects for Biomedicine</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electrical Engineering - Elektrotechnický časopis
ISSN
1335-3632
e-ISSN
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Volume of the periodical
68
Issue of the periodical within the volume
1
Country of publishing house
SK - SLOVAKIA
Number of pages
5
Pages from-to
74-78
UT code for WoS article
000396613900010
EID of the result in the Scopus database
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