Application of microscopy methods for characterization of silicon nanostructures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00488809" target="_blank" >RIV/68378271:_____/17:00488809 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Application of microscopy methods for characterization of silicon nanostructures

Original language description

Given the rise of importance of nanostructures in the field of photovoltaics and electronics, necessity of nanometer-resolved characterization methods is increasing accordingly. While atomic force microscopy (AFM) measurements are currently widely used as a reliable tool for topographical characterization, situation is much more complicated in case of electrical techniques. In this work, we would like to present several examples of conductive AFM (C-AFM) application for solar cell characterization.

Czech name

—

Czech description

—

Type

O - Miscellaneous

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů