EPR study of porous Si:C and SiO2:C layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00494130" target="_blank" >RIV/68378271:_____/18:00494130 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssb.201700559" target="_blank" >http://dx.doi.org/10.1002/pssb.201700559</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201700559" target="_blank" >10.1002/pssb.201700559</a>

Result language
angličtina
Original language name
EPR study of porous Si:C and SiO2:C layers
Original language description
Initial porous silicon (por-Si), carbonized porous silicon (por-Si:C), and carbon-incorporated porous silicon oxide (por-SiO2:C) layers are studied by electron paramagnetic resonance (EPR) at T¼10–13 K. Scanning transmission electron microscopy and electron energy loss (EEL) spectroscopy show that por-Si:C and por-SiO2:C layers have a highly disordered structure with mixing sp2 and sp3 C─C bonds. In the por-SiO2:C layers, the peak of the oxygen bonded to carbon in the form of hydroxyl groups is found in the EEL spectrum of the C K-edge region. Low-intensity signals of Lorentzian lineshape are detected in the EPR spectrum of por-Si, por-Si:C, por-SiO2:C layers.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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