Analytical expressions for numerical characterization of semiconductors per comparison with luminescence

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00498322" target="_blank" >RIV/68378271:_____/18:00498322 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.3390/ma11010002" target="_blank" >http://dx.doi.org/10.3390/ma11010002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/ma11010002" target="_blank" >10.3390/ma11010002</a>

Result language
angličtina
Original language name
Analytical expressions for numerical characterization of semiconductors per comparison with luminescence
Original language description
Luminescence is one of the most important characterisation tools of semiconductor materials and devices. Recently, a very efficient analytical set of equations has been applied to explain optical properties of dilute semiconductor materials, with an emphasis on the evolution of peak luminescence gain with temperature and its relation to sample quality. This paper summarizes important steps of the derivation of these expressions that have not been presented before and delivers a theoretical framework that can used to apply exactly solvable Hamiltonians for realistic studies of luminescence in various systems.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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