Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499514" target="_blank" >RIV/68378271:_____/18:00499514 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.15407/spqeo21.03.249" target="_blank" >http://dx.doi.org/10.15407/spqeo21.03.249</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.15407/spqeo21.03.249" target="_blank" >10.15407/spqeo21.03.249</a>
Alternative languages
Result language
angličtina
Original language name
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
Original language description
We present the experimental and theoretical results of analysis of the opticallyinduced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. The obtained value of the transversal mass is higher than that reported for bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p+-n junction as well as by reduction of the scattering process due to the presence of boron dipole centers.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS
ISSN
1560-8034
e-ISSN
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Volume of the periodical
21
Issue of the periodical within the volume
3
Country of publishing house
UA - UKRAINE
Number of pages
7
Pages from-to
249-255
UT code for WoS article
000451726000004
EID of the result in the Scopus database
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