Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499604" target="_blank" >RIV/68378271:_____/18:00499604 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1361-648X/aaa43e" target="_blank" >http://dx.doi.org/10.1088/1361-648X/aaa43e</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-648X/aaa43e" target="_blank" >10.1088/1361-648X/aaa43e</a>

Result language
angličtina
Original language name
Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3
Original language description
The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angleresolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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