Size-dependent effects in silicon carbide and diamond nanomaterials as studied by CW and pulse EPR methods

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499909" target="_blank" >RIV/68378271:_____/18:00499909 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.2174/9781681086934118010015" target="_blank" >http://dx.doi.org/10.2174/9781681086934118010015</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2174/9781681086934118010015" target="_blank" >10.2174/9781681086934118010015</a>

Result language
angličtina
Original language name
Size-dependent effects in silicon carbide and diamond nanomaterials as studied by CW and pulse EPR methods
Original language description
The great potential of the silicon carbide (SiC) and diamond nanoparticles for future applications in spintronics initiates detailed investigation of the effects of impurities and defects in their electronic characteristics. Among impurities, nitrogen doped SiC nanoparticles are an important item to be studied, because nitrogen donors are common contaminations of an n-type SiC bulk material. The first information about the shallow donor state of nitrogen in SiC nanoparticles and influence of the hydrogen as well as intrinsic defects on electronic properties of nitrogen was presented in this chapter.
Czech name
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Czech description
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Type
C - Chapter in a specialist book
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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