Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00579305" target="_blank" >RIV/68378271:_____/23:00579305 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0348145" target="_blank" >https://hdl.handle.net/11104/0348145</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.15407/spqeo26.01.030" target="_blank" >10.15407/spqeo26.01.030</a>

Result language
angličtina
Original language name
Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
Original language description
The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration (ND – NA) ≈ 1∙1017...4∙1019 cm–3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (ε1) and electron hopping over nitrogen donors in the D0 bands (ε3) were determined. It was found that in 6H-SiC ε1 = 50 meV for (ND – NA) ≈ 1∙10^17cm^–3, ε1 = 32 meV and ε3 = 6 meV for (ND – NA) ≈ 1∙10^19 cm^-3, ε1 = 13.5 meV and ε3 = 3.5 meV for (ND–NA) ≈ 4∙10^19 cm^–3.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Solid State Physics for 21st century</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical
Semiconductor Physics Quantum Electronics & Optoelectronics
ISSN
1560-8034
e-ISSN
1605-6582
Volume of the periodical
26
Issue of the periodical within the volume
1
Country of publishing house
UA - UKRAINE
Number of pages
6
Pages from-to
30-35
UT code for WoS article
000958234100004
EID of the result in the Scopus database
2-s2.0-85152599179

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