Paramagnetic defects in amorphous hydrogenated silicon carbide and silicon carbonitride films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499912" target="_blank" >RIV/68378271:_____/18:00499912 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.2174/9781681086934118010016" target="_blank" >http://dx.doi.org/10.2174/9781681086934118010016</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2174/9781681086934118010016" target="_blank" >10.2174/9781681086934118010016</a>

Result language
angličtina
Original language name
Paramagnetic defects in amorphous hydrogenated silicon carbide and silicon carbonitride films
Original language description
In this chapter, the nature of the defects and their relation to the incorporation of carbon, hydrogen, nitrogen and thermal treatment were investigated by electron paramagnetic resonance (EPR) spectroscopy for the fundamental insight of the electronic, optical and magnetic characteristics of the amorphous hydrogenated carbonrich silicon-carbon (a-Si1-xCx:H) and amorphous silicon carbonitride (a-SiCxNy) thin films. The paramagnetic defects due to the silicon dangling bonds (SiDBs), carbonrelated defects (CRDs) and K-center with Si-N2Si configuration were revealed in a-Si1-xCx:H films. The observed strong rise of the CRD spin density in annealed a-Si1-xCx:H films is caused by the hydrogen effusion process that takes place at Tann > 400°C.n
Czech name
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Czech description
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Type
C - Chapter in a specialist book
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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