Adhesion of a-SiC:H and a-SiOC:H films deposited on silicon wafers by PECVD

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F16%3APU122521" target="_blank" >RIV/00216305:26310/16:PU122521 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Adhesion of a-SiC:H and a-SiOC:H films deposited on silicon wafers by PECVD
Original language description
Adhesion of thin film to the substrate is one of the most important properties in determining its application possibilities. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) and hydrogenated amorphous carbon-silicon oxide (a-SiOC:H) alloys were deposited on silicon wafers from tetravinylsilane (TVS) monomer or its mixtures with argon or oxygen gases by plasma-enhanced chemical vapor deposition (PECVD). The silicon wafers were pretreated with argon or oxygen plasmas (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of thin films. A total mass flow rate of 3.8 sccm was used for film deposition; the argon or oxygen fraction in gas mixture was set to 0.92. Pulsed plasma was employed to deposit thin films at an effective power ranging from 2 to 150 W. Three sets of thin films with a thickness of 0.1 μm were deposited from pure TVS, TVS/Ar, and TVS/O2 mixtures to be tested by scratch test using a conical (90o) di
Czech name
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Czech description
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Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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