Nanoscratch Testing of Thin Films Prepared by Plasma Polymerization from the Vapour Phase of Tetravinylsilane Monomer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU124681" target="_blank" >RIV/00216305:26310/17:PU124681 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Nanoscratch Testing of Thin Films Prepared by Plasma Polymerization from the Vapour Phase of Tetravinylsilane Monomer
Original language description
One of the most important properties that determined application possibilities of thin films is their adhesion to the substrate. Value of the critical load obtained by nanoscratch test is the normal force which is evaluated from the measured load curves and corresponding to the first significant lateral force component fluctuation which correlates with the adhesion failure of the film. In addition, this critical load is load at which the adhesive failure occurs in the scratch track observed by atomic force microscopy. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) alloy were deposited on silicon wafers from tetravinylsilane (TVS) monomer by plasma-enhanced chemical vapor deposition (PECVD). The pretreatment of silicon wafers was carried out with argon or oxygen plasmas (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of films. A mass flow rate of TVS used for film deposition was 3.8 sccm at a pressure of
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
—
OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů