Characterization of a-SiC:H thin films prepared by PECVD from the point of adhesion

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F18%3APU129822" target="_blank" >RIV/00216305:26310/18:PU129822 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Characterization of a-SiC:H thin films prepared by PECVD from the point of adhesion
Original language description
Thin films characterization from the point of adhesion is mainly done by nanoscratch test. Possibilities of application can be determined by adhesion between substrate and thin film prepared e.g. PVD or CVD. In this case, adhesion of thin films of amorphous hydrogenated silicon carbide (a-SiC:H) to the silicon wafer substrate was studied. Industrial applications of this research could be in the field of composites without interface and protective coatings. Thin films were deposited from pure tetravinylsilane monomer (TVS) by plasma-enhanced chemical vapor deposition (PECVD). The substrates were pretreated with argon plasma (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of thin films. Plasma depositions of films were done in two regimes - pulsed plasma and continuous wave (3.8 sccm, 2.7 Pa). Range of the power during the depositions was between 2 and 150 W for pulsed plasma and 10 and 70 W for continuous wave. Prepare
Czech name
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Czech description
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Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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