Nanoscratch testing of a-SiC:H films on silicon wafers deposited by PECVD

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU124670" target="_blank" >RIV/00216305:26310/17:PU124670 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Nanoscratch testing of a-SiC:H films on silicon wafers deposited by PECVD
Original language description
Adhesion of thin film to the substrate is one of the most important properties in determining its application possibilities. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) alloy were deposited on silicon wafers from tetravinylsilane (TVS) monomer by plasma-enhanced chemical vapor deposition (PECVD). The silicon wafers were pretreated with argon or oxygen plasmas (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of films. A mass flow rate of TVS used for film deposition was 3.8 sccm at a pressure of 2.7 Pa. Pulsed plasma was employed to deposit thin films at an effective power ranging from 2 to 150 W. Thin films of 0.1 μm thickness were tested by scratch test using a conical (90 °) diamond tip with a radius of 1 µm, linearly loading with time from 1 µN to 6 mN at a loading rate of 12 mN/min and using a scratch length of 10 μm. The film adhesion was characterized by the critical load that is defined as the
Czech name
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Czech description
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Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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