Adhesion evaluation of a-SiC:H thin films on silicon wafers using the nanoscratch testing technique

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU125372" target="_blank" >RIV/00216305:26310/17:PU125372 - isvavai.cz</a>
Result on the web
<a href="https://www.empa.ch/web/s606/phd-symposium-2017" target="_blank" >https://www.empa.ch/web/s606/phd-symposium-2017</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Adhesion evaluation of a-SiC:H thin films on silicon wafers using the nanoscratch testing technique
Original language description
Scratch testing is the most commonly technique for assessing the adhesion of thin films to the substrates and determining its application possibilities. Planar silicon wafers were pretreated with argon plasma using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of films. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) were deposited from tetravinylsilane (TVS) monomer (pulsed plasma with effective power in range 2 – 150 W) on wafers by plasma enhanced chemical vapor deposition (PECVD). Films of 0.1 μm thickness were tested by scratch test using a conical diamond tip (radius of 1 μm) with the peak load up to 10mN and using 10 μm scratch length. Good reproducibility of the film adhesion was found for the individual depositions. No significant effect of loading rate ranging from 4 to 20 mN/min was observed. We revealed that the critical load increased with enhanced power from 1.6mN (2 W) up to 4.6mN (75 W) and was invariable for higher po
Czech name
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Czech description
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Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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