Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500481" target="_blank" >RIV/68378271:_____/18:00500481 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.pcrysgrow.2018.07.002" target="_blank" >https://doi.org/10.1016/j.pcrysgrow.2018.07.002</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.pcrysgrow.2018.07.002" target="_blank" >10.1016/j.pcrysgrow.2018.07.002</a>
Alternative languages
Result language
angličtina
Original language name
Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory
Original language description
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GC18-06970J" target="_blank" >GC18-06970J: Formation of heterovalent interfaces: A combined photoemission and ab initio DFT study of GaP/Si heterostructures</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Progress in Crystal Growth and Characterization of Materials
ISSN
0960-8974
e-ISSN
1878-4208
Volume of the periodical
64
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
30
Pages from-to
103-132
UT code for WoS article
000454966600001
EID of the result in the Scopus database
2-s2.0-85056423469