Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory
Result description
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory
Original language description
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.
Czech name
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Czech description
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Classification
Type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Progress in Crystal Growth and Characterization of Materials
ISSN
0960-8974
e-ISSN
1878-4208
Volume of the periodical
64
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
30
Pages from-to
103-132
UT code for WoS article
000454966600001
EID of the result in the Scopus database
2-s2.0-85056423469
Basic information
Result type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
OECD FORD
Condensed matter physics (including formerly solid state physics, supercond.)
Year of implementation
2018