III/V-on-Si interfaces: optical in situ control, surface science and DFT
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471513" target="_blank" >RIV/68378271:_____/16:00471513 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
III/V-on-Si interfaces: optical in situ control, surface science and DFT
Original language description
Pseudomorphic virtual GaP/Si substrates are attractive for III/V-on-Si integration for microelectronics, photovoltaics, and water-splitting. The heterointerface is of particular interest since its atomic and electronic structure highly impacts crystal quality. Well-ordered interfaces are desirable but the formation of polar-on-nonpolar heterointerfaces is not yet fully understood. It is instructive to control each of the three steps (i) Si surface formation, (ii) III/V nucleation, and (iii) III/V layer growth individually in situ, which largely benefits from complementary surface science techniques as well as density functional theory (DFT). Here, we will highlight how such a combination enables specific metalorganic vapor phase (MOVPE) preparation of virtual substrates for both (100) and (111) orientation.n
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů