Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00448022" target="_blank" >RIV/68378271:_____/15:00448022 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1021/jz502526e" target="_blank" >http://dx.doi.org/10.1021/jz502526e</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/jz502526e" target="_blank" >10.1021/jz502526e</a>

Result language
angličtina
Original language name
Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface
Original language description
Though III?V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking of transient optical in situ spectroscopy during chemical vapor deposition to chemicalanalysis by X-ray photoelectron spectroscopy enables us to distinguish between formation of surfaces and of the heterointerface. A terrace-related optical anisotropy signal evolves during pulsed GaP nucleation on single-domain Si(100) surfaces. This dielectric anisotropy agrees well with the one calculated for buried GaP/Si(100) interfaces from differently thick GaP epilayers. X-ray photoelectron spectroscopy reveals a chemically shifted contribution of the P and Si emission lines, which quantitativelycorresponds to the existence of Si?P bonds at the buried heterointerface.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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