Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500632" target="_blank" >RIV/68378271:_____/18:00500632 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/18:00322497
Result on the web
<a href="http://dx.doi.org/10.1109/JPHOTOV.2018.2851306" target="_blank" >http://dx.doi.org/10.1109/JPHOTOV.2018.2851306</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/JPHOTOV.2018.2851306" target="_blank" >10.1109/JPHOTOV.2018.2851306</a>

Result language
angličtina
Original language name
Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells
Original language description
Broadband transparent and highly conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconium-doped indium oxide (IO:Zr) as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5–4 eV), low free carrier absorption, and high lateral conductivity. A single film of IO:Zr has an electron mobility of 100 cm^2/Vs with a carrier density of 2.5–3x10^20 cm^-3, resulting in a sheet resistance of around 25 Ω/sq for 100-nm-thick films. Their implementation as a front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide. SHJ devices with the optimized IO:Zr front electrode, resulting in current densities of 40 mA/cm2, a fill factor of 80%, and a conversion efficiency of 23.4%.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GA18-24268S" target="_blank" >GA18-24268S: Manipulating properties of transition metal oxides interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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