Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456454" target="_blank" >RIV/68378271:_____/15:00456454 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/15:00233320
Result on the web
<a href="http://dx.doi.org/10.1109/JPHOTOV.2015.2450993" target="_blank" >http://dx.doi.org/10.1109/JPHOTOV.2015.2450993</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/JPHOTOV.2015.2450993" target="_blank" >10.1109/JPHOTOV.2015.2450993</a>
Alternative languages
Result language
angličtina
Original language name
Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells
Original language description
Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobilityare preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy - as a function of the sputtering oxygen partial pressure.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA14-05053S" target="_blank" >GA14-05053S: Preparation and properties of nanocrystalline diamond for photonic applications</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Journal of Photovoltaics
ISSN
2156-3381
e-ISSN
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Volume of the periodical
5
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
1340-1347
UT code for WoS article
000360436800011
EID of the result in the Scopus database
2-s2.0-84940047955