Electric-field-tuned topological phase transition in ultrathin Na3Bi

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00511237" target="_blank" >RIV/68378271:_____/18:00511237 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1038/s41586-018-0788-5" target="_blank" >https://doi.org/10.1038/s41586-018-0788-5</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41586-018-0788-5" target="_blank" >10.1038/s41586-018-0788-5</a>

Result language
angličtina
Original language name
Electric-field-tuned topological phase transition in ultrathin Na3Bi
Original language description
The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor 1–4 . In this scheme, ‘on’ is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator 5–9 , and ‘off ’ is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits 4 , which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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