Spin Hall Effect Transistor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10070154" target="_blank" >RIV/00216208:11320/10:10070154 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/10:00354545
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Spin Hall Effect Transistor
Original language description
The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploringspin Hall and spin precession phenomena in an electrically tunable semiconductor layer.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Science
ISSN
0036-8075
e-ISSN
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Volume of the periodical
330
Issue of the periodical within the volume
6012
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
000285603700034
EID of the result in the Scopus database
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