Photoluminescence in wide band gap nanocrystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00540846" target="_blank" >RIV/68378271:_____/18:00540846 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/18:00326543 RIV/68407700:21460/18:00326543

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Photoluminescence in wide band gap nanocrystals

Original language description

The diamond films were grown by microwave plasma enhanced CVD system. Temperature dependent steady-state photoluminescence (PL) of Si-V centres was measured within the range 11-300 K. PL measurements are correlated with process parameters. It was found that quartz or Si as substrates and substrate temperature of 800°C were the optimal parameters, at which the highest photoluminescence activity of Si-V centre was measured. For all the samples, the temperature dependent PL measurements exhibited the blue shift in zero-phonon line (ZPL) position for lower temperatures and for selected samples, ZPL narrowing were observed. This effect will be discussed from point of temperature behaviour of Si-V electronic transition energy. Temperature development of PL integral intensity was discussed by means of Boltzmann activation process. It suggests the contribution of other centres in luminescence process.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů