Influence of gas chemistry on Si-V color centers in diamond films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454703" target="_blank" >RIV/68378271:_____/15:00454703 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1002/pssb.201552222" target="_blank" >http://dx.doi.org/10.1002/pssb.201552222</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201552222" target="_blank" >10.1002/pssb.201552222</a>

Result language

angličtina

Original language name

Influence of gas chemistry on Si-V color centers in diamond films

Original language description

We studied the influence of process parameters on the incorporation and optical activity of the silicon vacancy (Si-V) zero phonon line (ZPL) in diamond films. The ZPL intensity at 738nm is studied in nano- and micro-crystalline diamond films deposited by MWCVD as a function of a substrate temperature, gas composition, i.e. CO2 and N2 concentrations in the gas mixture. We found that the ZPL intensity of Si-V center is independent in a broad deposition temperature range from 450°C to 1100°C with a full width of half maxima (FWHM) of 6 nm. For the lowest deposition temperature (350°C), the ZPL intensity decreases and the FWHM doubles. The Si-V center ZPL vanished for admixtures of 1% CO2 or 2.5% of N2 and higher in the gas mixture. For smaller concentrations, the ZPL intensity gradually decreased while keeping the ZPL peak position and FWHM constant. The influence of CO2 and N2 addition on the diamond morphology is also discussed with respect to the presence of Si-V centers.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA14-04790S" target="_blank" >GA14-04790S: Engineering Bulk and Surface of Diamond Nano-Objects for Biomedicine</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Volume of the periodical

252

Issue of the periodical within the volume

11

Country of publishing house

DE - GERMANY

Number of pages

5

Pages from-to

2580-2584

UT code for WoS article

000364690400038

EID of the result in the Scopus database

2-s2.0-84946423209