Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00540849" target="_blank" >RIV/68378271:_____/18:00540849 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications
Original language description
The plasma enhanced chemical vapour deposition (PECVD) was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Ge or Sn NPs) on the surface of hydrogenated silicon thin films. Formation of NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), PIN diode structures with and without the embedded Ge or Sn NPs were characterized of I-V characteristics.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů