Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00504730" target="_blank" >RIV/68378271:_____/19:00504730 - isvavai.cz</a>

Result on the web

<a href="http://hdl.handle.net/11104/0296313" target="_blank" >http://hdl.handle.net/11104/0296313</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-018-38472-9" target="_blank" >10.1038/s41598-018-38472-9</a>

Result language

angličtina

Original language name

Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Original language description

Here, we report on the fabrication of few-layer molybdenum disulfide films on the top of thin diamond substrates using a simplified sulfurization of a pre-deposited molybdenum coating. The as-prepared layers were characterized by a number of techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We observed that the sulfurization process had no impact on the diamond substrates and, in particular, none molybdenum carbide layer was formed at the interface between the Mo film and diamond substrate. We found out that the initial thickness of the Mo film determined the crystallographic orientation of the c-axis of the as-grown MoS2 layer. This enables a controlled growth of the MoS2 layers with a tailored crystallographic orientation for particular applications, such as solar cells, water splitting or water disinfection.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Scientific Reports

ISSN

2045-2322

e-ISSN

—

Volume of the periodical

9

Issue of the periodical within the volume

Feb

Country of publishing house

GB - UNITED KINGDOM

Number of pages

11

Pages from-to

1-11

UT code for WoS article

000458619600001

EID of the result in the Scopus database

2-s2.0-85061598042