Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F22%3A39919091" target="_blank" >RIV/00216275:25310/22:39919091 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acs.cgd.1c01504" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.cgd.1c01504</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.cgd.1c01504" target="_blank" >10.1021/acs.cgd.1c01504</a>
Alternative languages
Result language
angličtina
Original language name
Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x
Original language description
The synthesis of stoichiometric two-dimensional (2D) transition-metal dichalcogenides (TMDC) over large areas remains challenging. Using a combination of X-ray diffraction and X-ray absorption spectroscopy, we demonstrate the advantages of using a thin amorphous layer of S-rich MoS2 (MoS4 in this paper) for the growth of well-ordered crystalline MoS2 films via annealing at 900 degrees C. In contrast to the crystallization of stoichiometric amorphous MoS2, the crystallization of the as-depo sited amorphous MoS4 phase shows the strong preferred ordering of layered MoS2 on a Si/SiOx nontemplating substrate with the dominant (002) crystallographic plane and accompanying Kiessig fringes, which indicate the improved crystallinity of the MoS2 layers. A similar effect can only be achieved by the templated crystallization of an amorphous MoS2 thin film deposited on a c-plane sapphire substrate. We suggest that the crystal growth improvement originates from the lower coordination number (CN) of the Mo atoms in the MoS4 amorphous phase (CN = 4) in comparison with that of amorphous MoS2 (CN = 6) and the gradual release of free sulfur atoms from the thin film during crystallization.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Growth and Design
ISSN
1528-7483
e-ISSN
1528-7505
Volume of the periodical
22
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
3072-3079
UT code for WoS article
000812567000001
EID of the result in the Scopus database
2-s2.0-85129058821