Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918041" target="_blank" >RIV/00216275:25310/21:39918041 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsanm.1c01504" target="_blank" >https://pubs.acs.org/doi/10.1021/acsanm.1c01504</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsanm.1c01504" target="_blank" >10.1021/acsanm.1c01504</a>
Alternative languages
Result language
angličtina
Original language name
Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
Original language description
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS2, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 degrees C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS2 along the < 002 > crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano-and optoelectronic devices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS applied nano materials
ISSN
2574-0970
e-ISSN
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Volume of the periodical
4
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
11
Pages from-to
8834-8844
UT code for WoS article
000702079900020
EID of the result in the Scopus database
2-s2.0-85115645762