Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00505794" target="_blank" >RIV/68378271:_____/19:00505794 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.jcrysgro.2018.11.025" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2018.11.025</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.025" target="_blank" >10.1016/j.jcrysgro.2018.11.025</a>

Result language
angličtina
Original language name
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
Original language description
Although InGaN layers or InGaN/GaN superlattices are commonly used as efficiency improving buffers for LED structure production, there is still a controversy and active discussion about the mechanisms improving the luminescence properties of InGaN QWs grown above such buffers. In this manuscript it is shown that presence of In in the buffer layer is not the primary reason for photoluminescence improvement which can be also achieved by introduction of GaN buffer layer grown at lower temperature under nitrogen atmosphere. SIMS analysis suggests that low temperature buffer layer does not influence the impurity incorporation and hence the PL improvement is caused by suppressed contamination of MQW region grown above the low temperature buffer. AFM images for two samples that differ mostly in morphology however supports another explanation in which formation of larger V-pits is the main reason for the luminescence improvement.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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