Nanocrystalline diamond films heavily doped by boron: structure, optical and electrical properties
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00511648" target="_blank" >RIV/68378271:_____/19:00511648 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2521498" target="_blank" >http://dx.doi.org/10.1117/12.2521498</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2521498" target="_blank" >10.1117/12.2521498</a>
Alternative languages
Result language
angličtina
Original language name
Nanocrystalline diamond films heavily doped by boron: structure, optical and electrical properties
Original language description
A set of nanocrystalline diamond films was grown using microwave plasma enhanced chemical vapor deposition on fused silica substrates from methane diluted by hydrogen: with and without the addition of trimethylborane. The boron to carbon ratio in the gas phase was varied from 0 to 8000 ppm. The boron doped nanocrystalline diamond films were investigated using atomic-force microscopy, Raman spectroscopy, transmittance spectroscopy and electro-physical methods. For analysis of Raman spectra of heavily doped p-type nanocrystalline diamond using Fano contour one should take into account the shift and broadening of the phonon line due to phonon confinement in grains, or phonon scattering by defects. Raman spectra were calculated using a phonon confinement model and Fano contour. Good agreement was found between the calculated and experimental spectra.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Conference on Micro- and Nano-Electronics 2018
ISBN
978-1-5106-2709-3
ISSN
0277-786X
e-ISSN
—
Number of pages
10
Pages from-to
1-10
Publisher name
SPIE
Place of publication
Bellingham
Event location
Zvenigorod
Event date
Oct 1, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000464735700051