Towards a germanium and silicon laser: the history and the present

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521385" target="_blank" >RIV/68378271:_____/19:00521385 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0306016" target="_blank" >http://hdl.handle.net/11104/0306016</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/cryst9120624" target="_blank" >10.3390/cryst9120624</a>

Result language
angličtina
Original language name
Towards a germanium and silicon laser: the history and the present
Original language description
Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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