Laser induced damage threshold of silicon with native and artificial SiO2 layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00538876" target="_blank" >RIV/68378271:_____/19:00538876 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0316619" target="_blank" >http://hdl.handle.net/11104/0316619</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.17973/MMSJ.2019_12_2019103" target="_blank" >10.17973/MMSJ.2019_12_2019103</a>

Result language
angličtina
Original language name
Laser induced damage threshold of silicon with native and artificial SiO2 layer
Original language description
Spot size measurements of a 260 fs, 1030 nm focused spatially Gaussian pulsed laser beam were performed on a Silicon surface with native and thermally grown SiO2 layers using a widely known method of evaluating laser beam energy dependent damage area. Single pulse laser induced damage thresholds of both samples were also measured. Modification of the thermally grown SiO2 layer was analyzed in detail using optical, confocal and scanning electron microscopy. Restrictions in Gaussian beam spot size measurements on the samples with transparent coatings and several observable thresholds are discussed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
<a href="/en/project/LO1602" target="_blank" >LO1602: HiLASE: Superlasers for Real World</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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