Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533932" target="_blank" >RIV/68378271:_____/20:00533932 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2020.147346" target="_blank" >https://doi.org/10.1016/j.apsusc.2020.147346</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2020.147346" target="_blank" >10.1016/j.apsusc.2020.147346</a>

Result language
angličtina
Original language name
Atomic surface structure of MOVPE-prepared GaP(1 1 1)B
Original language description
Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtual substrates, we investigate the atomic structure of the MOVPE (metalorganic vapor phase epitaxy)-prepared GaP(1 1 1)B surface (phosphorus face). We find that upon high-temperature annealing in the H2-based MOVPE process ambience, the surface is phosphorus-depleted with a partially H-terminated phosphorus surface. Atomic force microscopy (AFM) reveals that a high proportion of the surface is covered by Ga-rich islands. We conclude that the STM images of the samples after high-temperature annealing only reflect the flat regions of the partially H-terminated phosphorus face, whereas an increasing coverage with Ga-rich islands, as detected by AFM and AES, forms upon annealing and underlies the higher proportion of Ga in the XPS measurements.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GC18-06970J" target="_blank" >GC18-06970J: Formation of heterovalent interfaces: A combined photoemission and ab initio DFT study of GaP/Si heterostructures</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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