Optical characterization of poly-SiOx and poly-SiCx carrier-selective passivating contacts

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536214" target="_blank" >RIV/68378271:_____/20:00536214 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0314032" target="_blank" >http://hdl.handle.net/11104/0314032</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.solmat.2020.110507" target="_blank" >10.1016/j.solmat.2020.110507</a>

Result language
angličtina
Original language name
Optical characterization of poly-SiOx and poly-SiCx carrier-selective passivating contacts
Original language description
The optical modelling for optimizing high-efficiency c-Si solar cells endowed with poly-SiOx or poly-SiCx carrierselective passivating contacts (CSPCs) demands a thorough understanding of their optical properties, especially their absorption coefficient. Due to the mixed phase nature of these CSPCs, spectroscopic ellipsometry is unable to accurately detect the weak free carrier absorption (FCA) at long wavelengths. In this work, the absorption coefficient of doped poly-SiOx and poly-SiCx layers as function of oxygen and carbon content, respectively, was obtained for wavelengths (300–2000 nm) by means of two alternative techniques.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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