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Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00511249" target="_blank" >RIV/68378271:_____/17:00511249 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1109/PVSC.2017.8366518" target="_blank" >http://dx.doi.org/10.1109/PVSC.2017.8366518</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/PVSC.2017.8366518" target="_blank" >10.1109/PVSC.2017.8366518</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells

  • Original language description

    We present the development of passivating contacts for high-efficiency silicon solar cells using silicon oxide (SiOx) and silicon carbide (SiCx)-based layers. We discuss a comprehensive optimization of a SiCx-based passivating hole contact reaching implied open circuit voltages >715 mV. In addition, we introduce a passivating hole contact based on nanocrystalline SiOx (nc-SiOx) targeting compatibility with higher process temperatures as well as increased optical transparency for front side application.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    IEEE Photovoltaics Specialists Conference (PVSC 2017) /44./

  • ISBN

    978-1-5090-5605-7

  • ISSN

    0160-8371

  • e-ISSN

  • Number of pages

    3

  • Pages from-to

    2073-2075

  • Publisher name

    IEEE

  • Place of publication

    New York

  • Event location

    Washington, DC

  • Event date

    Jun 25, 2017

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000455636002020