Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00511318" target="_blank" >RIV/68378271:_____/16:00511318 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1109/PVSC.2016.7750100" target="_blank" >http://dx.doi.org/10.1109/PVSC.2016.7750100</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/PVSC.2016.7750100" target="_blank" >10.1109/PVSC.2016.7750100</a>

Result language

angličtina

Original language name

Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer

Original language description

Passivating contacts based on nanostructured highly crystalline thin silicon layers are presented. The contact layer stack is optimized towards full crystallinity targeting high transparency. We present an optimization of an electron selective contact and demonstrate excellent surface passivation on n-type and also p-type wafers with such highly crystalline layers. On n-type wafers, the electron selective contact attains an implied open-circuit voltage of 718 mV at an annealing temperature of 925 degrees C. For p-type wafers we find optimum conditions between 850 degrees C and 900 degrees C attaining an implied open-circuit voltage of 723 mV. First tests with hole-selective contacts have yielded an implied open-circuit voltage of up to 676 mV after thermal annealing at 800 degrees C.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LM2015087" target="_blank" >LM2015087: Laboratory of Nanostructures and Nanomaterials</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

IEEE Photovoltaic Specialists Conference (PVSC 2016) /43./

ISBN

978-1-5090-2724-8

ISSN

0160-8371

e-ISSN

—

Number of pages

4

Pages from-to

2518-2521

Publisher name

IEEE

Place of publication

New York

Event location

Portland

Event date

Jun 5, 2016

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000399818702126