Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543404" target="_blank" >RIV/68378271:_____/21:00543404 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acsami.0c21282" target="_blank" >https://doi.org/10.1021/acsami.0c21282</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.0c21282" target="_blank" >10.1021/acsami.0c21282</a>
Alternative languages
Result language
angličtina
Original language name
Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography
Original language description
We investigate hole selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx. The fabrication process of these contacts involves an annealing step at temperatures above 750°C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy and Conductive Atomic Force Microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
13
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
9994-10000
UT code for WoS article
000626502700054
EID of the result in the Scopus database
2-s2.0-85102450293