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Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543404" target="_blank" >RIV/68378271:_____/21:00543404 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1021/acsami.0c21282" target="_blank" >https://doi.org/10.1021/acsami.0c21282</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsami.0c21282" target="_blank" >10.1021/acsami.0c21282</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography

  • Original language description

    We investigate hole selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx. The fabrication process of these contacts involves an annealing step at temperatures above 750°C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy and Conductive Atomic Force Microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Applied Materials and Interfaces

  • ISSN

    1944-8244

  • e-ISSN

    1944-8252

  • Volume of the periodical

    13

  • Issue of the periodical within the volume

    8

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    9994-10000

  • UT code for WoS article

    000626502700054

  • EID of the result in the Scopus database

    2-s2.0-85102450293