Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536704" target="_blank" >RIV/68378271:_____/20:00536704 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/20:00342288
Result on the web
<a href="https://doi.org/10.1109/JPHOTOV.2020.2998900" target="_blank" >https://doi.org/10.1109/JPHOTOV.2020.2998900</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/JPHOTOV.2020.2998900" target="_blank" >10.1109/JPHOTOV.2020.2998900</a>
Alternative languages
Result language
angličtina
Original language name
Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon
Original language description
High efficiency silicon solar cells generally feature carrier-selective contacts, for which there is interest in using a wide range of materials. The electrical and optical requirements that these layers must fulfill have been investigated previously for standard test conditions. Here, we investigate how the required work functions and layer thickness differ under other illumination conditions. The differences will be important for the optimization of tandem device subcells, and for devices which are intended for use in low-light conditions or under low-level concentration. Heterojunction cells are fabricated and the effect of reduced contact thickness and doping at different illumination levels is experimentally demonstrated. Simulations of a-Si/c-Si heterojunctions and ideal metal-semiconductor junctions reveal a logarithmic variation with illumination level of 0.1–10 suns in the electrode work function, and the heterojunction contact layer work function and thickness required.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Journal of Photovoltaics
ISSN
2156-3381
e-ISSN
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Volume of the periodical
10
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
12
Pages from-to
1214-1225
UT code for WoS article
000562057700002
EID of the result in the Scopus database
2-s2.0-85090159305