New metric for carrier selective contacts for silicon heterojunction solar cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00359370" target="_blank" >RIV/68407700:21230/22:00359370 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.solener.2022.08.047" target="_blank" >https://doi.org/10.1016/j.solener.2022.08.047</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solener.2022.08.047" target="_blank" >10.1016/j.solener.2022.08.047</a>

Result language

angličtina

Original language name

New metric for carrier selective contacts for silicon heterojunction solar cells

Original language description

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest reported voltage among crystalline silicon technologies. The electrode work-function, doping and thickness of the doped layer remain the key parameters for governing the cell performance. Recently, we have studied the requirements for carrier selective contacts under various illumination levels and reported logarithmic dependence of these parameters. In this work, we define a new metric for describing the ability of a contact to collect the carriers and named it as contact strength. We have developed an analytical approach for contact strength of hole selective contacts which represents the requirements on doping, thickness of the contact layer, and electrode work-function for a given illumination. First, the numerical model is calibrated with the experimental data for a wide range of illumination (0.01 Sun – 1.0 Sun) and then simulations have been fitted with analytical model. For the selective contact layer, we observe that only the total charge, rather than thickness and doping individually, matters. The work-function of the top electrode also contributes strongly to contact strength and can in principle substitute doped layer. This insightful metric will guide the solar cell technologists to better understand the carrier selective contacts and to maximize the cell performance not only at standard test conditions (STC), but also at low light illuminations.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

<a href="/en/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centre of Advanced Photovoltaics</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solar Energy

ISSN

0038-092X

e-ISSN

1471-1257

Volume of the periodical

144

Issue of the periodical within the volume

September

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

168-174

UT code for WoS article

000862848200005

EID of the result in the Scopus database

2-s2.0-85136564887