Graphene prepared by chemical vapour deposition process

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00538062" target="_blank" >RIV/68378271:_____/20:00538062 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1007/s41127-019-00029-6" target="_blank" >https://doi.org/10.1007/s41127-019-00029-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s41127-019-00029-6" target="_blank" >10.1007/s41127-019-00029-6</a>

Result language

angličtina

Original language name

Graphene prepared by chemical vapour deposition process

Original language description

The submitted work is focused on graphene preparation using the chemical vapour deposition method employing a cost-saving cold-wall reactor. Optimization of the parameters and conditions of the growth technology was pursued. We succeeded in preparing and transferring monolayer graphene onto a dielectric substrate and in studying its properties by various analytical methods in great detail. The transferred graphene material displays well-resolved band structure. The band structure evidences that undoped material was prepared, with Dirac points lying at the Fermi level.

Czech name

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Czech description

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Type

J_ost - Miscellaneous article in a specialist periodical

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Graphene Technology

ISSN

2365-6301

e-ISSN

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Volume of the periodical

5

Issue of the periodical within the volume

Feb

Country of publishing house

DE - GERMANY

Number of pages

9

Pages from-to

9-17

UT code for WoS article

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EID of the result in the Scopus database

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