Growth of graphene from C/Co/SiO2/Si structure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F16%3A43902509" target="_blank" >RIV/60461373:22310/16:43902509 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/16:00463609

Result on the web

<a href="http://dx.doi.org/10.1016/j.matpr.2016.02.034" target="_blank" >http://dx.doi.org/10.1016/j.matpr.2016.02.034</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matpr.2016.02.034" target="_blank" >10.1016/j.matpr.2016.02.034</a>

Result language

angličtina

Original language name

Growth of graphene from C/Co/SiO2/Si structure

Original language description

This paper deals with preparation of graphene using so-called transfer-free method. Graphene layers have been prepared from the structures C/Co/SiO2/Si together with several modifications. The said method has been used to prepare bi-layer graphene, which can be for example used for construction of unipolar transistors.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JJ - Other materials

OECD FORD branch

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Project

<a href="/en/project/NV15-33018A" target="_blank" >NV15-33018A: Application of adipose tissue-derived stem cells obtained by liposuction in tissue engineering</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Materials Today: Proceedings

ISBN

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ISSN

2214-7853

e-ISSN

—

Number of pages

6

Pages from-to

"S203"-"S208"

Publisher name

Elsevier B.V.

Place of publication

Amsterdam

Event location

Madrid

Event date

Sep 7, 2014

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000373068000012