Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539099" target="_blank" >RIV/68378271:_____/20:00539099 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1051/epjap/2020190253" target="_blank" >https://doi.org/10.1051/epjap/2020190253</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1051/epjap/2020190253" target="_blank" >10.1051/epjap/2020190253</a>
Alternative languages
Result language
angličtina
Original language name
Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star
Original language description
Hydrogenated amorphous substoichiometric silicon carbide (a-SiC:H) diodes with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi‐transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of both diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-Si1-xCx:H significantly deteriorates diode I-V characteristic.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
European Physical Journal-Applied Physics
ISSN
1286-0042
e-ISSN
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Volume of the periodical
88
Issue of the periodical within the volume
3
Country of publishing house
FR - FRANCE
Number of pages
6
Pages from-to
1-6
UT code for WoS article
000518694500002
EID of the result in the Scopus database
2-s2.0-85091898722