Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241254" target="_blank" >RIV/68407700:21460/15:00241254 - isvavai.cz</a>
Result on the web
<a href="https://journals.jsap.jp/jjapproceedings/online/3-011104" target="_blank" >https://journals.jsap.jp/jjapproceedings/online/3-011104</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.7567/JJAPCP.3.011104" target="_blank" >10.7567/JJAPCP.3.011104</a>
Alternative languages
Result language
angličtina
Original language name
Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications
Original language description
The hydrogenated amorphous silicon (a-Si:H) based p-i-n diode structures Al/a-Si:H(p+)/ a-Si:H(i)/(silicides NPs/a-Si)x/a-Si:H(i)/a-Si:H(n+)/ITO/glass with multiple layers (x = 8,...,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi2, Mg2Si and Ca2Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I-V curves of the a-Si:H p-i-n diodes with embedded silicide NP multistructures have shown the maximalforward current for Ca2Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca2Si and Mg2Si NPs multistructures.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Conference and Summer School on Advanced Silicide Technology 2014
ISBN
978-4-86348-491-7
ISSN
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e-ISSN
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Number of pages
8
Pages from-to
"011104-1"-"011104-8"
Publisher name
Kyushu Institute of Technology
Place of publication
Tokyo
Event location
Tokyo
Event date
Jul 19, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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