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Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241254" target="_blank" >RIV/68407700:21460/15:00241254 - isvavai.cz</a>

  • Result on the web

    <a href="https://journals.jsap.jp/jjapproceedings/online/3-011104" target="_blank" >https://journals.jsap.jp/jjapproceedings/online/3-011104</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.7567/JJAPCP.3.011104" target="_blank" >10.7567/JJAPCP.3.011104</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

  • Original language description

    The hydrogenated amorphous silicon (a-Si:H) based p-i-n diode structures Al/a-Si:H(p+)/ a-Si:H(i)/(silicides NPs/a-Si)x/a-Si:H(i)/a-Si:H(n+)/ITO/glass with multiple layers (x = 8,...,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi2, Mg2Si and Ca2Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I-V curves of the a-Si:H p-i-n diodes with embedded silicide NP multistructures have shown the maximalforward current for Ca2Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca2Si and Mg2Si NPs multistructures.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    International Conference and Summer School on Advanced Silicide Technology 2014

  • ISBN

    978-4-86348-491-7

  • ISSN

  • e-ISSN

  • Number of pages

    8

  • Pages from-to

    "011104-1"-"011104-8"

  • Publisher name

    Kyushu Institute of Technology

  • Place of publication

    Tokyo

  • Event location

    Tokyo

  • Event date

    Jul 19, 2014

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article