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Technological Possibilities of Si:H Thin Film Deposition with Embedded Cubic Mg2Si Nanoparticles

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00421905" target="_blank" >RIV/68378271:_____/13:00421905 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985858:_____/13:00421905

  • Result on the web

    <a href="http://dx.doi.org/10.1002/pssc.201300362" target="_blank" >http://dx.doi.org/10.1002/pssc.201300362</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/pssc.201300362" target="_blank" >10.1002/pssc.201300362</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Technological Possibilities of Si:H Thin Film Deposition with Embedded Cubic Mg2Si Nanoparticles

  • Original language description

    In this paper we introduce three technological ways how to increase an absorption coefficient of hydrogenated silicon/Si:H/ thin films and diode structures on the base of Si:H. The first one is reactive deposition epitaxy (RDE), which permit to form silicide nanoparticles of different elements /Fe, Cr, Ca, Mg/ with semiconducting properties and convenient band gap. Two more simple techniques have been also tested for the creation of magnesium silicide nanoparticles (Mg2Si-NPs): a reactive laser ablation(RLA) and the combination of Mg vacuum evaporation and Plasma-Enhanced Chemical Vapour Deposition (PECVD). The formation of Mg2Si-NPs, its structures and the changes of optical absorption for samples grown by three methods have been proved by the Ramanand optical spectroscopies.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA13-25747S" target="_blank" >GA13-25747S: Nanoobjects of ternary transition metal silicide-germanides for photovoltaics: morphology, structural and phase relationships, and physical properties</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi C: Current Topics in Solid State Physics

  • ISSN

    1862-6351

  • e-ISSN

  • Volume of the periodical

    10

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    5

  • Pages from-to

    1712-1716

  • UT code for WoS article

  • EID of the result in the Scopus database