ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00540385" target="_blank" >RIV/68378271:_____/20:00540385 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Original language description

In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů