Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F13%3A43918961" target="_blank" >RIV/49777513:23520/13:43918961 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2013.07.013" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.07.013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.07.013" target="_blank" >10.1016/j.tsf.2013.07.013</a>

Result language

angličtina

Original language name

Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films

Original language description

In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 °C in He and (ii) 1700 °C in air. XPS studies showed that annealing to 1400 °C in He does not affect the chemical composition of the film, while annealing to 1700 °C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 °C in He are amorphous. A three layer structure was found in the film annealed to 1700 °C in air: the original amorphous Si-B-C-N base-layer, a

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

542

Issue of the periodical within the volume

Neuveden

Country of publishing house

US - UNITED STATES

Number of pages

7

Pages from-to

167-173

UT code for WoS article

000323859400028

EID of the result in the Scopus database

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