Diamond based solution-gated transistors for biosensor use

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00546558" target="_blank" >RIV/68378271:_____/21:00546558 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/21:00554567
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Diamond based solution-gated transistors for biosensor use
Original language description
Bioelectronics and biosensors play a crucial role in modern society. The need for selectivity, sensitivity, fast and reliable response raises interest in the use of novel materials. Increased attention has been thus focused on carbon-based materials, namely diamond and graphene, which can provide many advantageous properties. In this paper, we focus on solution-gated field-effect transistors employing the hydrogen-terminated diamond surface as the functional layer for label-free monitoring proteins or cells in real-time. The hydrogen termination of diamond induces a sub-surface two-dimensional p-type channel sensitive to the surrounding conditions (gas molecules, biomolecules, or cells). Here, selected technological approaches in the fabrication of diamond-based solution-gated transistors are discussed.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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