General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00561007" target="_blank" >RIV/68378271:_____/21:00561007 - isvavai.cz</a>
Result on the web
<a href="https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design" target="_blank" >https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.37904/nanocon.2021.4309" target="_blank" >10.37904/nanocon.2021.4309</a>
Alternative languages
Result language
angličtina
Original language name
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Original language description
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
NANOCON 2021 - Conference proceedings
ISBN
978-80-88365-00-6
ISSN
2694-930X
e-ISSN
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Number of pages
6
Pages from-to
17-22
Publisher name
Tanger Ltd.
Place of publication
Ostrava
Event location
Brno
Event date
Oct 20, 2021
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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