Enhancing of the GaN HEMTs Devices through Advanced Innovative Topologies
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00380787" target="_blank" >RIV/68407700:21230/24:00380787 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/ASDAM63148.2024.10844652" target="_blank" >https://doi.org/10.1109/ASDAM63148.2024.10844652</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM63148.2024.10844652" target="_blank" >10.1109/ASDAM63148.2024.10844652</a>
Alternative languages
Result language
angličtina
Original language name
Enhancing of the GaN HEMTs Devices through Advanced Innovative Topologies
Original language description
The widespread adoption of the wide bandgap AlGaN/GaN High Electron Mobility Transistors (HEMTs) is limited mainly due to their higher cost compared to silicon devices. Even so, for power conversion and RF applications, AlGaN/GaN HEMTs offer a better alternative to silicon device. This article described fabricated innovative AlGaN/GaN HEMTs on Si based on Asymmetric waffle, Square waffle and Octagon waffle gate patterns which refer to conventional Finger structures. We have analyzed the topologies in terms of specific resistance reduction that can lead to area savings and thus cost reduction. The 2D simulation and DC Measurements of involved devices confirm the suppression of the specific resistance for Asymmetric waffle, Square waffle and Octagon waffle gate patterns, by 36%, 40% and 43% respectively, comparing to the Finger topology.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2024
ISBN
979-8-3315-4060-9
ISSN
2474-9737
e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
Institute of Electrical Engineering Slovak Academy of Sciences Bratislava
Place of publication
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Event location
Smolenice Castle, Slovakia
Event date
Oct 20, 2024
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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