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Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00334199" target="_blank" >RIV/68407700:21230/19:00334199 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.13164/re.2019.0598" target="_blank" >https://doi.org/10.13164/re.2019.0598</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.13164/re.2019.0598" target="_blank" >10.13164/re.2019.0598</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance

  • Original language description

    This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, until today no precise model considering segmentation of MOSFETs with waffle gate patterns, due to bulk connections, has been proposed. Two different MOSFET topologies with gate waffle patterns have been investigated and compared with the same on-resistance of a standard MOSFET with finger gate pattern. The first one with diagonal metal interconnections allows reaching more than 40% area reduction. The second MOSFET with the simpler orthogonal metal interconnections allows saving more than 20% area. Moreover, new models defining conditions where segmented power MOSFETs with waffle gate patterns occupy less area than the standard MOSFET with finger gate pattern, have been introduced.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Radioengineering

  • ISSN

    1210-2512

  • e-ISSN

  • Volume of the periodical

    28

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    CZ - CZECH REPUBLIC

  • Number of pages

    12

  • Pages from-to

    598-609

  • UT code for WoS article

    000485877700015

  • EID of the result in the Scopus database

    2-s2.0-85076701209