Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00334199" target="_blank" >RIV/68407700:21230/19:00334199 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.13164/re.2019.0598" target="_blank" >https://doi.org/10.13164/re.2019.0598</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.13164/re.2019.0598" target="_blank" >10.13164/re.2019.0598</a>
Alternative languages
Result language
angličtina
Original language name
Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
Original language description
This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, until today no precise model considering segmentation of MOSFETs with waffle gate patterns, due to bulk connections, has been proposed. Two different MOSFET topologies with gate waffle patterns have been investigated and compared with the same on-resistance of a standard MOSFET with finger gate pattern. The first one with diagonal metal interconnections allows reaching more than 40% area reduction. The second MOSFET with the simpler orthogonal metal interconnections allows saving more than 20% area. Moreover, new models defining conditions where segmented power MOSFETs with waffle gate patterns occupy less area than the standard MOSFET with finger gate pattern, have been introduced.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Radioengineering
ISSN
1210-2512
e-ISSN
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Volume of the periodical
28
Issue of the periodical within the volume
3
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
12
Pages from-to
598-609
UT code for WoS article
000485877700015
EID of the result in the Scopus database
2-s2.0-85076701209